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CSD16301Q2

Texas Instruments
Part Number CSD16301Q2
Manufacturer Texas Instruments
Description 25-V N-Channel Power MOSFET
Published Oct 22, 2022
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16301Q2 SLPS235D – OCTOBER ...
Datasheet PDF File CSD16301Q2 PDF File

CSD16301Q2
CSD16301Q2

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16301Q2 SLPS235D – OCTOBER 2009 – REVISED NOVEMBER 2016 CSD16301Q2 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • DC-DC Converters • Battery and Load Management Applications 3 Description This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications.
The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.
Top View D1 D 6D D2 5D G3 S .
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4S P0108-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 2 0.
4 VGS = 3 V 27 VGS = 4.
5 V 23 VGS = 8 V 19 1.
1 UNIT V nC nC mΩ V DEVICE CSD16301Q2 CSD16301Q2T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel SON 2.
00-mm × 2.
00-mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 +10 / –8 5 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 20 A Continuous Drain Current(1) 8.
2 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 85 A 2.
5 W 15 TJ, Operating Junction, TSTG Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 14 A, L = 0.
1 mH, RG = 25 Ω 10 mJ (1) Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.
06-in thick FR4 PCB.
(2) Max RθJC = 8.
4°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on...


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