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CSD16321Q5

Texas Instruments
Part Number CSD16321Q5
Manufacturer Texas Instruments
Description 25-V N-Channel Power MOSFET
Published Oct 22, 2022
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16321Q5 SLPS220D – AUGUST 2009...
Datasheet PDF File CSD16321Q5 PDF File

CSD16321Q5
CSD16321Q5

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16321Q5 SLPS220D – AUGUST 2009 – REVISED MAY 2017 CSD16321Q5 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Synchronous FET Applications 3 Description This 25-V, 1.
9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 14 2.
5 VGS = 3 V 2.
8 VGS = 4.
5 V 2.
1 VGS = 8 V 1.
9 1.
1 UNIT V nC nC mΩ V DEVICE CSD16321Q5 CSD16321Q5T Device Information(1) MEDIA QTY PACKAGE 13-Inch Reel 7-Inch Reel 2500 SON 5.
00-mm × 6.
00-mm 250 Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 +10 / –8 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 177 A Continuous Drain Current(1) 29 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 400 A 3.
1 W 113 TJ, Operating Junction, Tstg Storage Temperature –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 66 A, L = 0.
1 mH, RG = 25 Ω 218 mJ (1) Typical RθJA = 40°C/W on 1-in2, 2-oz Cu pad on 0.
06-in thick FR4 PCB.
(2) Max RθJC = 1.
1°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (...


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