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CSD16401Q5

Texas Instruments
Part Number CSD16401Q5
Manufacturer Texas Instruments
Description 25-V N-Channel Power MOSFET
Published Oct 22, 2022
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16401Q5 SLPS200C – AUGUST 2009...
Datasheet PDF File CSD16401Q5 PDF File

CSD16401Q5
CSD16401Q5

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD16401Q5 SLPS200C – AUGUST 2009 – REVISED JANUARY 2018 CSD16401Q5 25-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications 3 Description This 25-V, 1.
3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge, Total (4.
5 V) Qgd Gate Charge, Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage VALUE 25 21 5.
2 VGS = 4.
5 V 1.
8 VGS = 10 V 1.
3 1.
5 UNIT V nC nC mΩ V DEVICE CSD16401Q5 Device Information(1) MEDIA QTY PACKAGE 13-Inch Reel 2500 SON 5.
00-mm × 6.
00-mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 –12 to 16 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 100 A, L = 0.
1 mH, RG = 25 Ω 261 A 38 240 A 3.
1 W 156 –55 to 150 °C 500 mJ (1) RθJA = 40°C/W on 1-in2 (6.
45-cm2) Cu 2-oz (0.
071-mm) thick on 0.
06-in (1.
52-mm) thick FR4 PCB.
(2) Max RθJC = 0.
8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(ON) vs VGS Gate Charge 6 12 TC = 25°C, I D = 40 A ID = 40 A 5 TC = 125°C, I D = 40 A VDS = 12.
5 V 10 RDS(on) - On-State Resistance...


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