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MMDF2P01HD

ON Semiconductor
Part Number MMDF2P01HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 20, 2022
Detailed Description MMDF2P01HD Preferred Device Power MOSFET 2 Amps, 12 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs fea...
Datasheet PDF File MMDF2P01HD PDF File

MMDF2P01HD
MMDF2P01HD

Overview
MMDF2P01HD Preferred Device Power MOSFET 2 Amps, 12 Volts P−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.
) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 2.
) VDSS VDGR VGS ID ID IDM PD 12 12 ± 8.
0 3.
4 2.
1 17 2.
0 Vdc Vdc Vdc Adc Apk Watts Operating and Storage Temperature Range − 55 to 150 °C Thermal Resistance − Junction to Ambient (Note 2.
) RθJA 62.
5 °C/W Maximum Lead Temperature for Soldering TL Purposes, 1/8″ from case for 10 seconds 260 °C 1.
Negative sign for P−Channel device omitted for clarity.
2.
Mounted on 2″ square FR4 board (1″ sq.
2 oz.
Cu 0.
06″ thick single sided) with one die operating, 10 sec.
max.
http://onsemi.
com 2 AMPERES 12 VOLTS RDS(on) = 180 mW P−Cha...


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