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LM1815

Texas Instruments
Part Number LM1815
Manufacturer Texas Instruments
Description Adaptive Variable Reluctance Sensor Amplifier
Published Nov 25, 2022
Detailed Description LM1815 www.ti.com SNOSBU8F – SEPTEMBER 2000 – REVISED MARCH 2013 LM1815 Adaptive Variable Reluctance Sensor Amplifier...
Datasheet PDF File LM1815 PDF File

LM1815
LM1815

Overview
LM1815 www.
ti.
com SNOSBU8F – SEPTEMBER 2000 – REVISED MARCH 2013 LM1815 Adaptive Variable Reluctance Sensor Amplifier Check for Samples: LM1815 FEATURES 1 •2 Adaptive Hysteresis • Single Supply Operation • Ground Referenced Input • True Zero Crossing Timing Reference • Operates from 2V to 12V Supply Voltage • Handles Inputs from 100 mVP-P to over 120VP-P with External Resistor • CMOS Compatible Logic APPLICATIONS • Position Sensing with Notched Wheels • Zero Crossing Switch • Motor Speed Control • Tachometer • Engine Testing DESCRIPTION The LM1815 is an adaptive sense amplifier and default gating circuit for motor control applications.
The sense amplifier provides a one-shot pulse output whose leading edge coincides with the negativegoing zero crossing of a ground referenced input signal such as from a variable reluctance magnetic pick-up coil.
In normal operation, this timing reference signal is processed (delayed) externally and returned to the LM1815.
A Logic input is then able to select either the timing reference or the processed signal for transmission to the output driver stage.
The adaptive sense amplifier operates with a positivegoing threshold which is derived by peak detecting the incoming signal and dividing this down.
Thus the input hysteresis varies with input signal amplitude.
This enables the circuit to sense in situations where the high speed noise is greater than the low speed signal amplitude.
Minimum input signal is 150mVP-P.
Connection Diagram Figure 1.
Top View 14-Lead SOIC or PDIP See D or NFF0014A Package These devices have limited built-in ESD protection.
The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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