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IMZ120R030M1H

Part Number	IMZ120R030M1H
Manufacturer	Infineon
Description	Silicon Carbide MOSFET
Published	Dec 31, 2022
Detailed Description	IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching loss...
Datasheet	IMZ120R030M1H PDF File

Overview

IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.
5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off switching losses  Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar...

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IMZ120R030M1H Silicon Carbide MOSFET - Infineon

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