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MBRS10H100CT

Taiwan Semiconductor
Part Number MBRS10H100CT
Manufacturer Taiwan Semiconductor
Description Schottky Barrier Surface Mount Rectifier
Published Jan 22, 2023
Detailed Description MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● ...
Datasheet PDF File MBRS10H100CT PDF File

MBRS10H100CT
MBRS10H100CT

Overview
MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● Guard ring for overvoltage protection ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 10 A 100 - 200 V IFSM TJ MAX Package 120 A 175 °C TO-263AB (D2PAK) Configuration Dual dies MECHANICAL DATA ● Case: TO-263AB (D2PAK) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.
40g (approximately) TO-263AB (D2PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER MBRS SYMBOL 10H100CT Marking code on the device MBRS 10H100CT Repetitive peak reverse voltage VRRM 100 Reverse voltage, total rms value VR(RMS) 70 MBRS 10H150CT MBRS 10H150CT 150 105 MBRS 10H200CT UNIT MBRS 10H200CT 200 V 140 V Forward current Surge peak forward current, 8.
3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square wave, 20KHz) Peak repetitive reverse surge current(1) Critical rate of rise of off-state voltage IF IFSM IFRM IRRM dv/dt 10 120 10 1 10,000 A A A 0.
5 A V/µ s Junction temperature TJ -55 to +175 °C Storage temperature Notes: 1.
tp = 2.
0μs, 1.
0KHz TSTG -55 to +175 °C 1 Version: J2103 MBRS10H100CT – MBRS10H200CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance SYMBOL RӨJC TYP 3.
5 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRS10H100CT MBRS10H150CT IF = 5A, TJ = 25°C MBRS10H200CT MBRS10H100CT Forward voltage per diode(1) MBRS10H150CT IF = 10A...


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