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NVCR4LS1D3N08M7A

ON Semiconductor
Part Number NVCR4LS1D3N08M7A
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description MOSFET – Power, N-Channel 80 V, 1.27 mW NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1.0 mW at VGS = 10 V • Typical Qg(...
Datasheet PDF File NVCR4LS1D3N08M7A PDF File

NVCR4LS1D3N08M7A
NVCR4LS1D3N08M7A

Overview
MOSFET – Power, N-Channel 80 V, 1.
27 mW NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1.
0 mW at VGS = 10 V • Typical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking Gross Die Counts: 1001 6604 x 3683 6584 ± 30 x 3663 ± 30 6399.
3 x 3452.
6 343.
1 x 477.
5 101.
6 ±19.
1 DATA SHEET www.
onsemi.
com ORDERING INFORMATION Device NVCR4LS1D3N08M7A Package Wafer Sawn on Foil RECOMMENDED STORAGE CONDITIONS Temperature R...


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