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FQU3N60CTU

ON Semiconductor
Part Number FQU3N60CTU
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 23, 2023
Detailed Description FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.4 A, 3.4 W This N−Channel enhancement mode power MOSFET is produced using ON ...
Datasheet PDF File FQU3N60CTU PDF File

FQU3N60CTU
FQU3N60CTU

Overview
FQU3N60CTU N-Channel QFET) MOSFET 600 V, 2.
4 A, 3.
4 W This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 2.
4 A, 600 V, RDS(on) = 3.
4 W (Max.
) @ VGS = 10 V, ID = 1.
2 A • Low Gate Charge (Typ.
10.
5 nC) • Low Crss (Typ.
5 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • LCD / LED TV • Lighting • Charger / Adapter www.
onsemi.
com D G S IPAK3 CASE 369AR ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018 1 May, 2019 − Rev.
0 Publication Order Number: FQU3N60CTU/D FQU3N60CTU MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain−to−Source Voltage Gate−to−Source Voltage Drain Current IDM EAS IAR EAR dv/dt Drain Current Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery (Note 3) 600 V ±30 V Continuous (TC = 25°C) 2.
4 A Continuous (TC = 100°C) 1.
5 Pulsed (Note 1) 9.
6 A 150 mJ 2.
4 A 4.
0 mJ 4.
5 V/ns PD Power Dissipation TC = 25°C Derate Above 25°C 50 W 0.
4 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 seconds) 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Repetitive Rating: Pulse width limited by maximum junction t...


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