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FDV301N-F169

ON Semiconductor
Part Number FDV301N-F169
Manufacturer ON Semiconductor
Description N-Channel Digital FET
Published Jan 23, 2023
Detailed Description Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effec...
Datasheet PDF File FDV301N-F169 PDF File

FDV301N-F169
FDV301N-F169

Overview
Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for digital transistors.
Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.
Features • 25 V, 0.
22 A Continuous, 0.
5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.
7 V ♦ RDS(on) = 4 W @ VGS = 4.
5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits.
VGS(th) < 1.
06 V • Gate−Source Zener for ESD Ruggedness.
> 6 kV Human Body Model • Replace Multiple NPN Digital Transistors with One DMOS FET • This Device is Pb−Free and Halide Free Vcc D OUT IN G S GND Figure 1.
Inverter Application DATA SHEET www.
onsemi.
com D G S SOT−23 CASE 318−08 MARKING DIAGRAM &E&Y 301&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 301 = Specific Device Code &G = Date Code ORDERING INFORMATION Device Package Shipping† FDV301N, FDV301N−F169 SOT−23−3 (Pb−Free, Halide−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009 1 August, 2021 − Rev.
8 Publication Order Number: FDV301N/D FDV301N, FDV301N−F169 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol Parameter FDV301N Unit VDSS, VCC VGSS, VI ID, IO Drain−Source Voltage, Power Supply Voltage Gate−Source Voltage, VIN Drain/Output Current − Continuous 25 V 8 V 0.
22 A 0.
5 PD TJ, TSTG ESD Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL−STD−883D ...


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