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FDD86567-F085

ON Semiconductor
Part Number FDD86567-F085
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description FDD86567-F085 N-Channel PowerTrench® MOSFET FDD86567-F085 N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ Features „...
Datasheet PDF File FDD86567-F085 PDF File

FDD86567-F085
FDD86567-F085

Overview
FDD86567-F085 N-Channel PowerTrench® MOSFET FDD86567-F085 N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.
2 mΩ Features „ Typical RDS(on) = 2.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D D G G S DTO-P-2A5K2 (TO-252) S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy Power Dissipation PD Derate Above 25oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 60 ±20 100 See Figure 4 115 227 1.
52 -55 to + 175 0...


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