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FDD6N50TM-F085

ON Semiconductor
Part Number FDD6N50TM-F085
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 23, 2023
Detailed Description FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10...
Datasheet PDF File FDD6N50TM-F085 PDF File

FDD6N50TM-F085
FDD6N50TM-F085

Overview
FDD6N50TM-F085 500V N-Channel MOSFET FDD6N50TM-F085 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.
9Ω @VGS = 10 V • Low gate charge ( typical 12.
8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant D Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D G S D-PAK Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1)...


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