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FDMD8430

ON Semiconductor
Part Number FDMD8430
Manufacturer ON Semiconductor
Description Dual N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.12 mW General Description This package integrates two N−Channe...
Datasheet PDF File FDMD8430 PDF File

FDMD8430
FDMD8430

Overview
FDMD8430 Dual N-Channel PowerTrench) MOSFET 30 V, 28 A, 2.
12 mW General Description This package integrates two N−Channel devices connected internally in common−source configuration.
This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.
Provides a very small footprint (3.
3 x 5 mm) for higher power density.
Features • Max rDS(on) = 2.
12 mW at VGS = 10 V, ID = 28 A • Max rDS(on) = 2.
95 mW at VGS = 4.
5 V, ID = 24 A • Ideal for Flexible Layout in Secondary Side Synchronous Rectification • 100% UIL Tested • Termination is Lead−free and RoHS Compliant Applications • Isolated DC−DC Synchronous Rectifiers • Common Ground Load Switches www.
onsemi...


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