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NTLJD3182FZ

ON Semiconductor
Part Number NTLJD3182FZ
Manufacturer ON Semiconductor
Description Power MOSFET and Schottky Diode
Published Jan 23, 2023
Detailed Description NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, Single P−Channel & Schottky Barrier Diode, ESD Features • W...
Datasheet PDF File NTLJD3182FZ PDF File

NTLJD3182FZ
NTLJD3182FZ


Overview
NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.
0 A, Single P−Channel & Schottky Barrier Diode, ESD Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction • Lowest RDS(on) Solution in 2x2 mm Package • Footprint Same as SC−88 Package • Low Profile (< 0.
8 mm) for Easy Fit in Thin Environments • ESD Protected • High Current Schottky Diode: 2 A Current Rating • This is a Pb−Free Device Applications • Optimized for Battery and Load Management Applications in Portable Equipment • Li−Ion Battery Charging and Protection Circuits • DC−DC Buck Circuit MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VD...



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