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NTMFS5C410NLT

ON Semiconductor
Part Number NTMFS5C410NLT
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description MOSFET – Power, Single, N-Channel 40 V, 0.82 mW, 330 A NTMFS5C410NLT Features • Small Footprint (5x6 mm) for Compact De...
Datasheet PDF File NTMFS5C410NLT PDF File

NTMFS5C410NLT
NTMFS5C410NLT

Overview
MOSFET – Power, Single, N-Channel 40 V, 0.
82 mW, 330 A NTMFS5C410NLT Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C410NLTWF − Wettable Flank Option for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 330 A 230 167 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 50 A 35 3.
8 W 1.
9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 29 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 169 A EAS 706 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.
9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
DATA SHEET www.
onsemi.
com V(BR)DSS 40 V RDS(ON) MAX 0.
82 mW @ 10 V 1.
2 mW @ 4.
5 V ID MA...


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