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NVH4L045N065SC1

ON Semiconductor
Part Number NVH4L045N065SC1
Manufacturer ON Semiconductor
Description SiC MOSFET
Published Jan 24, 2023
Detailed Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Features • Typ...
Datasheet PDF File NVH4L045N065SC1 PDF File

NVH4L045N065SC1
NVH4L045N065SC1

Overview
DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Features • Typ.
RDS(on) = 33 mW @ VGS = 18 V Typ.
RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC−DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage ...


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