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NVTFS8D1N08H

ON Semiconductor
Part Number NVTFS8D1N08H
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 30, 2023
Detailed Description DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.3 mW, 61 A NVTFS8D1N08H Features • Small Fo...
Datasheet PDF File NVTFS8D1N08H PDF File

NVTFS8D1N08H
NVTFS8D1N08H


Overview
DATA SHEET www.
onsemi.
com MOSFET - Power, N-Channel, Shielded Gate 80 V, 8.
3 mW, 61 A NVTFS8D1N08H Features • Small Footprint (3x3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS8D1N08H − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 61 A 43 Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady TC = 25°C PD State TC = 100°C Steady TA = 25°C ID State TA = 25°C 75 W 38 14 A 10 Power Dissipation RqJA (Notes 1, 2) Steady TA = 25°C PD State TA = 25°C 3.
8 W 1.
9 Pulsed Drain Current TA = 25°C, tp = 100 ms IDM 216 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy IS 61 A EAS 113 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
V(BR)DSS 80 V RDS(ON) MAX 8.
3 mW @ 10 V ID MAX 61 A N−Channel D (5−8) G (4) DDD D S (1, 2, 3) G S S S Pin 1 WDFN8 (3.
3x3.
3, 0.
65 P) CASE 511DY WDFNW8 (3.
3x3.
3, 0.
65 P) CA...


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