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NVMFS4C306N

ON Semiconductor
Part Number NVMFS4C306N
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Feb 5, 2023
Detailed Description MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.4 mW, 71 A NVMFS4C306N Features • Low RDS(on) to Minimize Conduction...
Datasheet PDF File NVMFS4C306N PDF File

NVMFS4C306N
NVMFS4C306N

Overview
MOSFET - Power, Single N-Channel, SO-8 FL 30 V, 3.
4 mW, 71 A NVMFS4C306N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C306NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Reverse Battery Protection • DC−DC Converters Output Driver www.
onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 3.
4 mW @ 10 V 4.
8 mW @ 4.
5 V D (5−8) ID MAX 71 A G (4) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Notes 1, 2) TA = 25°C ID TA = 100°C 20.
6 A 14.
5 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD 3 W Continuous Drain Current RqJC (Notes 1, 2, 3) Steady State TC = 25°C ID 71 A Continuous Drain TC = 100°C...


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