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FCP190N65S3R0

ON Semiconductor
Part Number FCP190N65S3R0
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Feb 5, 2023
Detailed Description FCP190N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description SUPERFET III MOSFET is...
Datasheet PDF File FCP190N65S3R0 PDF File

FCP190N65S3R0
FCP190N65S3R0

Overview
FCP190N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 159 mW • Ultra Low Gate Charge (Typ.
Qg = 33 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 300 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.
onsemi.
com VDSS 650 V RDS(ON) MAX 190 mW @ 10 V ID MAX 17 A D G S POWER MOSFET GDS TO−220 CASE 340AT MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev.
4 $Y&Z&3&K FCP190 N65S3R0 $Y &Z &3 &K FCP190N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCP190N65S3R0/D FCP190N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage DC AC (f > 1 Hz) 650 V ±30 V ±30 V ID Drain Current Continuous (TC = 25°C) 17 Continuous (TC = 100°C) 11 IDM Drain Current Pulsed (Note 1) 42.
5 EAS Single Pulsed Avalanche Energy (Note 2) 76 IAS Avalanche Current (Note 1) 2.
5 EAR Repetitive Avalanche Energy (Note 1) 1.
44 dv/dt MOSFET dv/dt 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 2...


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