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NVHL082N65S3F

Part Number	NVHL082N65S3F
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Feb 5, 2023
Detailed Description	MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 40 A, 82 mW NVHL082N65S3F Description SUPERFET III MOSFET is ON ...
Datasheet	NVHL082N65S3F PDF File

Overview

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 40 A, 82 mW NVHL082N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 64 mW • Ultra Low Gate Charge (Typ.
Qg = 81 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 722 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Applications • Automotive On Board Charger HEV−EV • Automotive DC/DC converter for HEV−EV www.
onsemi.
com VDSS 650 V RDS(ON) MAX 82 mW @ 10 V D ID MAX 40 A G S POWER MOSFET G DS TO−247 LONG LEADS CASE 340CX MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2018 September, 2020 − Rev.
2 $Y&Z&3&K NVHL 082N65S3F $Y &Z &3 &K NVHL082N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: NVHL082N65S3F/D NVHL082N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 650 V ±30 V ±30 ID Drain Current − Continuous (TC = 25°C) 40 − Continuous (TC = 100°C) 25.
5 IDM Drain Current − Pulsed (Note 1) 100 EAS Single Pulsed Avalanche Energy (Note 2) 510 EAR Repetitive Avalanche Energy (Note 1) 3.
13 dv/dt MOSFET dv/dt 100 ...

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