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FGY100T120RWD

ON Semiconductor
Part Number FGY100T120RWD
Manufacturer ON Semiconductor
Description Power IGBT
Published Feb 5, 2023
Detailed Description IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.4 V, 100 A FGY100T120RWD Descripti...
Datasheet PDF File FGY100T120RWD PDF File

FGY100T120RWD
FGY100T120RWD

Overview
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.
4 V, 100 A FGY100T120RWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch.
Features • Low Conduction Loss and Optimized Switching • Maximum Junction Temperature − TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • 100% of the Parts are Dynamically Tested • Short Circuit Rated...


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