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FDMD8540L

ON Semiconductor
Part Number FDMD8540L
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Feb 5, 2023
Detailed Description MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW FDMD8540L General Description Th...
Datasheet PDF File FDMD8540L PDF File

FDMD8540L
FDMD8540L

Overview
MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.
5 mW Q2: 40 V, 156 A, 1.
5 mW FDMD8540L General Description This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package.
HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Features Q1: N−Channel • Max rDS(on) = 1.
5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.
2 mW at VGS = 4.
5 V, ID = 26 A Q2: N−Channel • Max rDS(on) = 1.
5 mW at VGS = 10 V, ID = 33 A • Max rDS(on) = 2.
2 mW at VGS = 4.
5 V, ID = 26 A • Ideal for Flexible Layout in Primary Side of Bridge Topology • 100% UIL Tested • Kelvin High Side MOSFET Drive Pin−out Capability • This Device is Pb−Free and are RoHS Compliant Applications • POL Synchronous Dual • One Phase Motor Half Bridge • Half/Full Bridge Secondary Synchronous Rectification www.
onsemi.
com VDS 40 V rDS(ON) MAX 1.
5 mW @ 10 V 2.
2 mW @ 4.
5 V ID MAX 156 A Pin 1 D2/S1 D2/S1 D2/S1 S2 G2 D1 D1 D1 GR G1 P...


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