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MTP33N10E

ON Semiconductor
Part Number MTP33N10E
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 13, 2023
Detailed Description MTP33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand h...
Datasheet PDF File MTP33N10E PDF File

MTP33N10E
MTP33N10E

Overview
MTP33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 100 Vdc 100 Vdc ± 20 Vdc ± 40 Vpk 33 Adc 20 99 Apk 125 Watts 1.
0 W/°C Operating and Storage Temperature Range TJ, Tstg − 55 to °C 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.
000 mH, RG = 25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 sec.
EAS 545 mJ RθJC RθJA TL °C/W 1.
0 62.
5 260 °C http://onsemi.
com 33 AMPERES 100 VOLTS RDS(on) = 60 mΩ N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 4 Drain 1 2 3 TO−220AB CASE 221A STYLE 5 MTP33N10E LLYWW 1 Gate 3 Source 2 Drain MTP33N10E LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device Package Shipping MTP33N10E TO−220AB 50 Units/Rail Pref...


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