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NTLJS4149P

ON Semiconductor
Part Number NTLJS4149P
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 13, 2023
Detailed Description NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Expo...
Datasheet PDF File NTLJS4149P PDF File

NTLJS4149P
NTLJS4149P

Overview
NTLJS4149P Power MOSFET -30 V, -5.
9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features •ăWDFN Package with Exposed Drain Pad for Excellent Thermal Conduction •ă2x2 mm Footprint Same as SC-88 Package •ăLow Profile (< 0.
8 mm) for Easy Fit in Thin Environments •ăThis is a Pb-Free Device Applications •ăLi Ion Battery Linear Mode Charging for Portable Power Management in Noisy Environment •ăDC-DC Conversion Buck/Boost Circuits •ăHigh Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady TA = 25°C State TA = 85°C ID -4.
5 A -3.
3 t ≤ 5 s TA = 25°C -5.
9 Power Dissipation (Note 1) Steady State TA = 25°C PD t ≤5 s 1.
9 W 3.
2 Continuous Drain Current (Note 2) Power Dissipation (Note 2) TA = 25°C Steady TA = 85°C ID State TA = 25°C PD -2.
7 A -2.
0 0.
7 W Pulsed Drain Current tp = 10 ms IDM -18 A Operating Junction and Storage Temperature TJ, TSTG -55 to °C 150 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS -1.
5 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.
127 in sq [2 oz] including traces).
2.
Surface Mounted on FR4 Board using the minimum recommended pad size.
©Ă Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev.
0 http://onsemi.
com V(BR)DSS -30 V RDS(on) MAX 62 mW @ -4.
5 V 75 mW @ -2.
5 V S G D P-CHANNEL MOSFET S D MARKING DIAGRAM Pin 1 WDFN6 CASE 506AP 1 2 J9MG 6 5 3G 4 J9 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either loca...


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