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NTLJS4159N

Part Number	NTLJS4159N
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Feb 13, 2023
Detailed Description	NTLJS4159N Power MOSFET 30 V, 7.8 A, Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Dr...
Datasheet	NTLJS4159N PDF File

Overview

NTLJS4159N Power MOSFET 30 V, 7.
8 A, Single N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 • Lowest RDS(on) in 2x2 mm Package • 1.
8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive • Low Profile (< 0.
8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device Applications • DC−DC Conversion • Boost Circuits for LED Backlights • Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• Low Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±8.
0 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C 6.
0 A 4.
4 t ≤ 5 s TA = 25°C 7.
8 Power Dissipation (Note 1) Steady PD State TA = 25°C t ≤5 s 1.
92 W 3.
3 Continuous Drain Current (Note 2) Power Di...

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NTLJS4159N Power MOSFET - ON Semiconductor

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