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NTH4L028N170M1

Part Number	NTH4L028N170M1
Manufacturer	ON Semiconductor
Description	SiC MOSFET
Published	Feb 16, 2023
Datasheet	NTH4L028N170M1 PDF File

Features

• Typ. RDS(on) = 28 mW @ VGS = 20 V 
• Ultra Low Gate Charge (QG(tot) = 200 nC) 
• High Speed Switching with Low Capacitance (Coss = 200 pF) 
• 100% Avalanche Tested 
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications

• UPS 
• DC−DC C...

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NTH4L028N170M1 SiC MOSFET - ON Semiconductor

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