|
Part Number
|
NTH4L020N090SC1 |
|
Manufacturer
|
ON Semiconductor |
|
Description
|
SiC MOSFET |
|
Published
|
Feb 16, 2023 |
|
Datasheet
|
 NTH4L020N090SC1 PDF File
|
Features
• Typ. RDS(on) = 20 mW @ VGS = 15 V
Typ. RDS(on) = 16 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 196 nC)
• Low Effective Output Capacitance (Coss = 296 pF)
• 100% UIL Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
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