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SCT040W120G3AG

STMicroelectronics
Part Number SCT040W120G3AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Feb 18, 2023
Detailed Description SCT040W120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package Fe...
Datasheet PDF File SCT040W120G3AG PDF File

SCT040W120G3AG
SCT040W120G3AG

Overview
SCT040W120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ.
, 40 A in an HiP247 package Features Order code SCT040W120G3AG VDS 1200 V RDS(on) typ.
40 mΩ ID 40 A HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si...


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