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STK224N4F7AG

STMicroelectronics
Part Number STK224N4F7AG
Manufacturer STMicroelectronics
Description Automotive-grade N-channel Power MOSFET
Published Feb 18, 2023
Detailed Description STK224N4F7AG Datasheet Automotive-grade N-channel 40 V, 1.2 mΩ typ., 100 A STripFET™ F7 Power MOSFET in a LFPAK 5x6 pack...
Datasheet PDF File STK224N4F7AG PDF File

STK224N4F7AG
STK224N4F7AG

Overview
STK224N4F7AG Datasheet Automotive-grade N-channel 40 V, 1.
2 mΩ typ.
, 100 A STripFET™ F7 Power MOSFET in a LFPAK 5x6 package TAB 4 3 2 1 LFPAK 5x6 D(TAB) Features Order code STK224N4F7AG V DS 40 V RDS(on) max 1.
5 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications ID 100 A G(4) Description S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
G4S123DTAB_LFPAK Product status STK224N4F7AG Product summary Order code STK224N4F7AG Marking 224N4F7 Package LFPAK 5x6 Packing Tape and reel DS12550 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com STK224N4F7AG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C IAV Avalanche current, repetitive or not repetitive (pulse width limited by maximum junction temperature) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV, VDD = 25 V) Tj Operating junction temperature range Tstg Storage temperature range 1.
Drain current is limited by package, the current capability of the silicon is 224 A at 25 °C.
2.
Pulse width limited by safe operating area Value Unit 40 V ±20 V 100 A 100 A 400 A 150 W 56 A 470 mJ -55 to 175 °C Table 2.
Thermal data Symbol Parameter Rthj-pcb (1) Thermal resistance junction-pcb.
Rthj-case Thermal resistance junction-case.
1.
When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s...


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