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STB12N60DM2AG

Part Number	STB12N60DM2AG
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Mar 1, 2023
Detailed Description	STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package ...
Datasheet	STB12N60DM2AG PDF File

Overview

STB12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 mΩ typ.
, 10 A MDmesh DM2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code STB12N60DM2AG VDS @ TJ max.
650 V RDS(on ) max.
430 mΩ ID 10 A • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable ...

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STB12N60DM2AG N-channel Power MOSFET - STMicroelectronics

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