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STL7LN65K5AG

Part Number	STL7LN65K5AG
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Mar 1, 2023
Detailed Description	STL7LN65K5AG Datasheet Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV...
Datasheet	STL7LN65K5AG PDF File

Overview

STL7LN65K5AG Datasheet Automotive-grade N-channel 650 V, 0.
95 Ω typ.
, 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package 1 23 4 PowerFLAT 5x6 VHV D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v6 Features Order code VDS RDS(on) max.
ID STL7LN65K5AG 650 V 1.
15 Ω 5A • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STL7LN65K5AG Product summary Order code STL7LN65K5AG Marking 7LN65K5 Package PowerFLAT 5x6 VHV Packing Tape and reel DS13267 - Rev 2 - November 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STL7LN65K5AG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C ID (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (3) Peak diode recovery voltage slope dv/dt (4) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 5 A, di/dt 100 A/μs; VDS peak < V(BR)DSS,VDD= 520 V.
4.
VDS ≤ 520 V.
Table 2.
Thermal data Symbol Parameter RthJA Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1.
When mounted on 1inch² FR-4 board, 2 oz Cu.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not repet...

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STL7LN65K5AG N-channel Power MOSFET - STMicroelectronics

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