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SCT012H90G3AG

STMicroelectronics
Part Number SCT012H90G3AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TA...
Datasheet PDF File SCT012H90G3AG PDF File

SCT012H90G3AG
SCT012H90G3AG

Overview
SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ.
, 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT012H90G3AG VDS 900 V RDS(on) typ.
12 mΩ • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency ID 110 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced an...


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