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SCTWA60N120G2AG

STMicroelectronics
Part Number SCTWA60N120G2AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads...
Datasheet PDF File SCTWA60N120G2AG PDF File

SCTWA60N120G2AG
SCTWA60N120G2AG

Overview
SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ.
, 52 A in an HiP247 long leads package Features Order code SCTWA60N120G2AG VDS 1200 V RDS(on) max.
58 mΩ ID 52 A HiP247 long leads D(2, TAB) G(1) S(3) AM01475v1_noZen • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The...


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