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STGO30H60DLLFBAG

STMicroelectronics
Part Number STGO30H60DLLFBAG
Manufacturer STMicroelectronics
Description IGBT
Published Mar 1, 2023
Detailed Description STGO30H60DLLFBAG Datasheet Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL pa...
Datasheet PDF File STGO30H60DLLFBAG PDF File

STGO30H60DLLFBAG
STGO30H60DLLFBAG

Overview
STGO30H60DLLFBAG Datasheet Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package TAB Features TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1 • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Logic level gate drive • High-speed switching series • Minimized tail current • VCE(sat) = 1.
6 V (typ.
) @ IC = 30 A • Low VF soft-recovery co-packaged diode • Tight parameter distribution • Safer paralleling • Low thermal resistance G1CTABE2345678 Applications • Automotive injection Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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