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STGWA80H65DFBAG

Part Number	STGWA80H65DFBAG
Manufacturer	STMicroelectronics
Description	IGBT
Published	Mar 1, 2023
Detailed Description	STGWA80H65DFBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long...
Datasheet	STGWA80H65DFBAG PDF File

Overview

STGWA80H65DFBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads Features TO-247 long leads C(2, TAB) • AEC-Q101 qualified • High-speed switching series • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.
65 V (typ.
) @ IC = 80 A • Minimized tail current • Tight parameter distribution • Positive temperature VCE(sat) coefficient • Soft and very fast recovery antiparallel diode Applications G(1) • PFC • High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the new HB series of IGBTs, which represen...

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STGWA80H65DFBAG IGBT - STMicroelectronics

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