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STPST8H100

STMicroelectronics
Part Number STPST8H100
Manufacturer STMicroelectronics
Description power Schottky trench rectifier
Published Mar 1, 2023
Detailed Description Product label STPST8H100 Datasheet 100 V - 8 A power Schottky trench rectifier Features • ST trench patented process • ...
Datasheet PDF File STPST8H100 PDF File

STPST8H100
STPST8H100

Overview
Product label STPST8H100 Datasheet 100 V - 8 A power Schottky trench rectifier Features • ST trench patented process • High junction temperature capability • Low forward voltage drop • Low recovery charges • Reduces conduction, reverse and switching losses • Avalanche tested • Flat packages • ECOPACK2 compliant Applications • DC/DC converter • LED lighting • Flyback topology • Auxiliary power supply • Switch mode power supply (SMPS) Description This 8 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.
Integrated in flat and space-saving packages, this STPST8H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies.
It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering.
ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products.
Product status link STPST8H100 Product summary IF(AV) 8A VRRM 100 V Tj (max.
) 175 °C VF (typ.
) 0.
560 V DS14187 - Rev 1 - January 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STPST8H100 Characteristics 1 Characteristics Table 1.
Absolute ratings (limiting values at 25 °C, unless otherwise specified, with 2 anode terminals short-circuited) Symbol Parameter Value VRRM Repetitive peak reverse voltage 100 IF(AV) Average forward current, δ = 0.
5, square wave Tc = 155 °C 8 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 IAS Single pulse avalanche current(1) Tj = 25°C, L = 300 µH, VDD = 15 V 12 Tstg Storage temperature range -65 to +175 Tj Maximum operating junction temperature(2) +175 1.
Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform.
2.
(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway fo...


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