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X0405MB

STMicroelectronics
Part Number X0405MB
Manufacturer STMicroelectronics
Description 4A Sensitive gate SCR
Published Mar 5, 2023
Detailed Description A2 A1 A2 G DPAK Product status link X0405MB Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 50 µA Tj max. 125 °...
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X0405MB
X0405MB

Overview
A2 A1 A2 G DPAK Product status link X0405MB Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 50 µA Tj max.
125 °C X0405MB Datasheet 4 A Sensitive gate SCR in DPAK package Features • 4 A SCR • Sensitive SCR: IGT = 50 µA • VDRM / VRRM = 600 V and VDSM / VRSM = 750 V • 125 °C maximum junction temperature Tj • DPAK SMD package • Halogen-free molding, lead-free plating • ECOPACK2 compliant Application • Actuators • Ignitors • Inrush current limiting circuits Description The X04 series is 4 A SCR housed in compact SMD DPAK package.
This highly sensitive device is suited to home appliances or power tools and industrial systems and drives loads up to 4 A.
DS14025 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com X0405MB Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (limiting values) Symbol IT(RMS) IT AV ITSM I2t dl/dt VDRM/VRRM VDSM/VRSM IGM PGM Tstg Tj TL Parameter RMS on-state current (full sine wave) RMS on-state average current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 60 Hz Repetitive peak off-state voltage Non Repetitive peak off-state voltage, 10 ms Maximum peak gate current Maximum gate power dissipation Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Tc = 114 °C Tc = 114 °C t = 8.
3 ms t = 10 ms tp = 10 ms Tj = 125 °C Tj = 125 °C tp = 20 µs, Tj = 125 °C Value 4 2.
5 33 30 9 50 600 750 1.
2 0.
5 -40 to +125 -40 to +125 260 Unit A A A A2s A/µs V V A W °C °C °C Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions IGT(1) VGT VGD VRGM IL IH (2) dV/dt (2) VD = 12 V, RL = 140 Ω VD = VDRM, RL = 3.
3 kΩ IRG = 10 µA IG = 1.
2 x IGT IT = 500 mA, gate open VD = 67 % VDRM, RGK = 1 kΩ Tj = 125 °C Tj = 110 °C Min.
Max.
Max...


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