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X0402MH

STMicroelectronics
Part Number X0402MH
Manufacturer STMicroelectronics
Description 4A Sensitive gate SCR
Published Mar 5, 2023
Detailed Description A2 A1 A2 G IPAK Product status link X0402MH Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 200 µA Tj max. 125 ...
Datasheet PDF File X0402MH PDF File

X0402MH
X0402MH

Overview
A2 A1 A2 G IPAK Product status link X0402MH Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 200 µA Tj max.
125 °C X0402MH Datasheet 4 A Sensitive gate SCR in IPAK package Features • 4 A SCR • Sensitive SCR: IGT = 200 µA • VDRM / VRRM = 600 V and VDSM / VRSM = 750 V • 125 °C maximum junction temperature Tj • IPAK package • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applications • Actuators • Ignitors • Inrush current limiting circuits Description The X04 series is 4 A SCR housed in compact through hole IPAK package.
This highly sensitive device is suited to home appliances or power tools and industrial systems and drives loads up to 4 A.
DS14067 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com X0402MH Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (limiting values) Symbol IT(RMS) IT AV ITSM I2t dl/dt VDRM/VRRM VDSM/VRSM IGM PGM Tstg Tj TL Parameter RMS on-state current (full sine wave) RMS on-state average current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 60 Hz Repetitive peak off-state voltage Non Repetitive peak off-state voltage, 10 ms Maximum peak gate current Maximum gate power dissipation Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Tc = 114 °C Tc = 114 °C t = 8.
3 ms t = 10 ms tp = 10 ms Tj = 125 °C Tj = 125 °C tp = 20 µs, Tj = 125 °C Value 4 2.
5 33 30 9 50 600 750 1.
2 0.
5 -40 to +125 -40 to +125 260 Unit A A A A2s A/µs V V A W °C °C °C Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions IGT(1) VGT VD = 12 V, RL = 140 Ω VGD VD = VDRM, RL = 3.
3 kΩ Tj = 125 °C VRGM IRG = 10 µA IL IG = 1.
2 x IGT IH (2) IT = 500 mA, gate open dV/dt (2) VD = 67 % VDRM , RGK = 1 kΩ Tj = 1...


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