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Z0409MB

STMicroelectronics
Part Number Z0409MB
Manufacturer STMicroelectronics
Description 4A Triac
Published Mar 5, 2023
Detailed Description Z0409MB Datasheet 4 A - Triac in DPAK package A2 A1 A2 G DPAK Product status link Z0409MB Product summary IT(RMS) 4...
Datasheet PDF File Z0409MB PDF File

Z0409MB
Z0409MB

Overview
Z0409MB Datasheet 4 A - Triac in DPAK package A2 A1 A2 G DPAK Product status link Z0409MB Product summary IT(RMS) 4A VDSM/VRSM 750 V IGT 10 mA Tj max.
125 °C Features • 4 A Triac • VDRM / VRRM = 600 V and VDSM / VRSM = 750 V • 125 °C maximum junction temperature Tj • DPAK package • 4 quadrants triacs with IGT = 10 mA • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applications • Actuators • Heating elements • Inrush current limiting circuits Description The Z0409MB series is 4 A Triac housed in compact SMD DPAK.
This 4 quadrants device is suited to home appliances or power tools and industrial systems and drives loads up to 4 A.
DS14022 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com Z0409MB Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (limiting values) Symbol IT(RMS) ITSM I2t dl/dt VDRM/VRRM VDSM/VRSM IGM PGM Tstg Tj TL Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t value for fusing Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz Repetitive peak off-state voltage Non Repetitive peak off-state voltage, 10 ms Maximum peak gate current Maximum gate power dissipation Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Tc = 107 °C t = 16.
7 ms t = 20 ms tp = 10 ms Tj = 125 °C Tj = 125 °C tp = 20 µs, Tj = 125 °C Value 4 16 15 1.
5 50 600 750 1.
2 0.
5 -40 to +125 -40 to +125 260 Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Value IGT(1) VD = 12 V, RL = 33 Ω Max.
10 VGT VD = 12 V, RL = 33 Ω Max.
1.
3 VGD VD = VDRM, RL = 3.
3 kΩ Tj = 125 °C Min.
0.
2 IL IG = 1.
2 x IGT I-III-IV Max.
15 II Max.
25 IH (2) IT = 500 mA, gate open Max.
10 dV/dt (2) VD = 67 % VDRM ; VR = 67 % VRRM , gate open Tj = 110 °C Min.
...


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