DatasheetsPDF.com

STTH110-Y

STMicroelectronics
Part Number STTH110-Y
Manufacturer STMicroelectronics
Description Automotive high voltage ultrafast rectifier
Published Mar 6, 2023
Detailed Description STTH110-Y Datasheet Automotive high voltage ultrafast rectifier SMB Flat Features SMB Flat Wettable leads • AEC-Q101...
Datasheet PDF File STTH110-Y PDF File

STTH110-Y
STTH110-Y

Overview
STTH110-Y Datasheet Automotive high voltage ultrafast rectifier SMB Flat Features SMB Flat Wettable leads • AEC-Q101 qualified • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • ECOPACK2 or ECOPACK3 compliant component on demand Description The STTH110-Y, which is using ST’s new 1000 V planar technology, is especially suited for switching mode base drive and transistor circuits.
The device is also intended for use as a free-wheeling diode in power supplies and other power switching applications in automotive K functions.
Product status link STTH110-Y Product summary IF(AV) 1A VRRM 1000 V Tj (max.
) 175 °C VF (typ.
) 0.
98 V Trr (typ.
) 52 ns DS10077 - Rev 2 - March 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STTH110-Y Characteristics 1 Characteristics Table 1.
Absolute ratings (limiting values at Tj= 25 °C, unless otherwise specified) Symbol Parameter Value VRRM Repetitive peak reverse voltage 1000 IF(AV) Average forward current TL=140 °C δ = 0.
5 1 IFSM Forward surge current tp= 8.
3 ms 20 Tstg Storage temperature range -65to + 175 Tj(1) Operating temperature range -40to + 175 1.
(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Unit V A A °C °C Symbol Rth(j-l) Table 2.
Thermal resistance Parameter Junction to lead Value 20 Unit °C/W Table 3.
Static electrical characteristic Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop 1.
Pulsetest: tp = 5 ms, δ < 2% 2.
Pulsetest: tp = 380 µs, δ < 2% Test conditions Tj= 25 °C Tj= 125 °C VR=VRRM Tj= 25 °C Tj= 150 °C IF=1 A To evaluate the conduction losses use the following equation: P = 1.
20 x IF(AV) + 0.
225 IF²(RMS) Min.
Typ.
Max.
Unit - 5 µA - 1 50 - 1.
7 V - 0.
98 1.
42 Table 4.
Dynamic electrical characteristics Symbol Parameter trr Reverse recovery time tfr F...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)