DatasheetsPDF.com

STL325N4LF8AG

STMicroelectronics
Part Number STL325N4LF8AG
Manufacturer STMicroelectronics
Description Automotive N-channel Power MOSFET
Published Mar 6, 2023
Detailed Description STL325N4LF8AG Datasheet Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MO...
Datasheet PDF File STL325N4LF8AG PDF File

STL325N4LF8AG
STL325N4LF8AG


Overview
STL325N4LF8AG Datasheet Automotive N‑channel enhancement mode logic level 40 V, 0.
75 mΩ max.
, 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 4 3 2 1 PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL325N4LF8AG VDS 40 V • AEC-Q101 qualified • MSL1 grade • 175 °C operating temperature • 100% avalanche tested • Wettable flank package RDS(on) max.
0.
75 mΩ ID 373 A Applications G(4) • Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Product status link STL325N4LF8AG Product summary Order code STL325N4LF8AG Marking 325N4LF8 Package PowerFLAT 5x6 Packing Tape and reel DS13900 - Rev 1 - April 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STL325N4LF8AG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings (at Tc = 25 °C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±16 V ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 373 A 264 IDM(1)(2)(3) Drain current (pulsed), tP = 10 µs 1492 A PTOT Total power dissipation at TC = 25 °C 188 W IAS Single pulse avalanche current (pulse width limited by TJ max.
) 60 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = 60 A, RGmin = 25 Ω) 590 mJ Tj Operating junction temperature range Tstg Storage temperature range -55 to 175 °C 1.
The value is relevant to RthJC.
Current limitations will come from the operative conditions, such as temperature and thermal resistance of the PCB.
2.
Specified by design and evaluated by characterization, not tested in production.
3.
Pulse width is limited by safe operating area.
Table 2.
Thermal data ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)