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BULD741T4

STMicroelectronics
Part Number BULD741T4
Manufacturer STMicroelectronics
Description High voltage fast-switching NPN power transistor
Published Mar 6, 2023
Detailed Description BULD741 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic par...
Datasheet PDF File BULD741T4 PDF File

BULD741T4
BULD741T4

Overview
BULD741 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies.
3 1 DPAK TO-252 IPAK TO-251 3 2 1 Figure 1.
Internal schematic diagram Table 1.
Device summary Order codes Marking BULD741T4 BULD741-1 BULD741 BULD741 Package DPAK IPAK July 2007 Rev 2 Packaging Tape & reel Tube 1/11 www.
st.
com 11 Electrical ratings 1 Electrical ratings Table 2.
Symbol Absolute maximum rating Parameter VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max.
operating junction temperature Table 3.
Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case __max BULD741 Value 1050 400 V(BR)EBO 2.
5 5 1.
5 3 30 -65 to 150 150 Unit V V V A A A A W °C °C Value 4.
16 Unit °C/W 2/11 BULD741 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4.
Electrical characteristics Symbol Parameter Test conditions Min.
Typ.
Max.
Unit ICES Collector cut-off current (VBE =0V) VCE =1050V 0.
2 10 µA ICEO Collector cut-off current (IB =0) VCE =400V 10 250 µA V(BR)EBO Emitter-base breakdown voltage (IC = ...


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