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STH200N10WF7-2

Part Number	STH200N10WF7-2
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Mar 6, 2023
Detailed Description	STH200N10WF7-2 Datasheet N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H...
Datasheet	STH200N10WF7-2 PDF File

Overview

STH200N10WF7-2 Datasheet N-channel 100 V, 3.
2 mΩ typ.
, 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3) DTG1S23NZ Features Order code VDS STH200N10WF7-2 100 V • Best-in-class SOA capability • High current surge capability • Extremely low on-resistance RDS(on) max.
4.
0 mΩ ID 180 A PTOT 340 W Applications • Hot-swap • Electronic fuse • Load switch • In-rush current limiter Description This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance.
The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Product status link STH200N10WF7-2 Product summary Order code STH200N10WF7-2 Marking 200N10WF7 Package H²PAK-2 Packing Tape and reel DS11828 - Rev 4 - July 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STH200N10WF7-2 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate source voltage Drain current (continuous) at TC = 25 °C (1) ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Avalanche current, repetitive or not repetitive IAV (pulse width limited by maximum junction temperature) EAS Single pulse avalanche energy (TJ = 25 °C, ID = IAV, VDD = 25 V) TJ Operating junction temperature range Tstg Storage temperature range 1.
Current limited by package.
2.
Pulse width limited by safe operating area.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1.
When mounted on an 1 inch2 FR-4 board, 2 oz of Cu, t < 10 s.
Value Unit 100 V ±20 V 180 A 150 A 720 A 340 W 65 A 840 mJ -55 to 175 °C Value 0.
44 35 Unit °C...

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