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STP60N043DM9

STMicroelectronics
Part Number STP60N043DM9
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Mar 6, 2023
Detailed Description STP60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package TAB TO-220 1 23 ...
Datasheet PDF File STP60N043DM9 PDF File

STP60N043DM9
STP60N043DM9


Overview
STP60N043DM9 Datasheet N-channel 600 V, 38 mΩ typ.
, 56 A MDmesh DM9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS RDS(on) max.
ID STP60N043DM9 600 V 43 mΩ 56 A • Fast-recovery body diode • Worldwide best RDS(on) per area among silicon-based fast recovery devices • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness Applications • Power supplies and converters • LLC resonant converter Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode.
The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STP60N043DM9 Product summary Order code STP60N043DM9 Marking 60N043DM9 Package TO-220 Packing Tube DS13931 - Rev 3 - March 2023 For further information contact your local STMicroelectronics sales office.
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st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope di/dt(3) Peak diode recovery current slope dv/dt(4) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Referred to TO-247 package.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 28 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
4.
VDS ≤ 400 V.
Symbol RthJC RthJA T...


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