DatasheetsPDF.com

STL22N60DM6

STMicroelectronics
Part Number STL22N60DM6
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 6, 2023
Detailed Description STL22N60DM6 Datasheet N-channel 600 V, 220 mΩ typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 ...
Datasheet PDF File STL22N60DM6 PDF File

STL22N60DM6
STL22N60DM6

Overview
STL22N60DM6 Datasheet N-channel 600 V, 220 mΩ typ.
, 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code VDS RDS(on) max.
ID STL22N60DM6 600 V 265 mΩ 13 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STL22N60DM6 Product summary Order code STL22N60DM6 Marking 22N60DM6 Package PowerFLAT 8x8 HV Packing Tape and reel DS13914 - Rev 1 - February 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com STL22N60DM6 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope di/dt (2) Peak diode recovery current slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 13 A, VDS (peak) < V(BR)DSS, VDD = 400 V.
3.
VDS ≤ 480 V Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1.
When m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)