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STD65N160M9

STMicroelectronics
Part Number STD65N160M9
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 6, 2023
Detailed Description STD65N160M9 Datasheet N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TA...
Datasheet PDF File STD65N160M9 PDF File

STD65N160M9
STD65N160M9

Overview
STD65N160M9 Datasheet N-channel 650 V, 132 mΩ typ.
, 20 A MDmesh M9 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) Features Order code VDS RDS(on) max.
ID STD65N160M9 650 V 160 mΩ 20 A • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested • Zener-protected S(3) AM01476v1_tab Product status link STD65N160M9 Applications • High efficiency switching applications Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Product summary Order code STD65N160M9 Marking 65N160M9 Package DPAK Packing Tape and reel DS14010 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD65N160M9 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope di/dt(3) Peak diode recovery current slope dv/dt(4) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Referred to TO-220 package.
2.
Pulse width is limited by safe operating area.
3.
ISD ≤ 10 A, VDS (peak) < V(BR)DSS, VDD ≤ 400 V.
4.
VDS (peak) < V(BR)DSS, VDD ≤ 400 V.
Table 2.
T...


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