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STD80N240K6

STMicroelectronics
Part Number STD80N240K6
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 6, 2023
Detailed Description STD80N240K6 Datasheet N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TA...
Datasheet PDF File STD80N240K6 PDF File

STD80N240K6
STD80N240K6

Overview
STD80N240K6 Datasheet N-channel 800 V, 197 mΩ typ.
, 16 A MDmesh K6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max.
ID STD80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications AM01476v1_tab • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.
The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Product status link STD80N240K6 Product summary Order code STD80N240K6 Marking 80N240K6 Package DPAK Packing Tape and reel DS13793 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD80N240K6 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C dv/dt(3) Peak diode recovery voltage slope di/dt(3) Peak diode recovery current slope dv/dt(4) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Referred to TO-220 package.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 4 A; VDS (peak) = 400 V.
4.
VDS ≤ 640 V.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA(1) Thermal resistance, junction-to-ambient 1.
When mounted on an 1-inch² FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (pulse width limited by TJ...


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