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STG50M120F3D7

Part Number	STG50M120F3D7
Manufacturer	STMicroelectronics
Description	IGBT
Published	Mar 7, 2023
Detailed Description	STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G Features • Ma...
Datasheet	STG50M120F3D7 PDF File

Overview

STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.
7 V (typ.
) @ IC = 50 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient Applications E • Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-l...

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STG50M120F3D7 IGBT - STMicroelectronics

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