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STPSC10H12G2Y-TR

Part Number	STPSC10H12G2Y-TR
Manufacturer	STMicroelectronics
Description	silicon carbide power Schottky diode
Published	Mar 14, 2023
Detailed Description	STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Prod...
Datasheet	STPSC10H12G2Y-TR PDF File

Overview

STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Product label Product status link STPSC10H12G2Y-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.
) 175 °C VF (typ.
) 1.
35 V Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • Low VF • D²PAK HV creepage distance (anode to cathode) = 5.
38 mm min.
• ECOPACK2 compliant Applications • On board charger (OBC) • DC/DC • PFC Description This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.
It is manufact...

Similar Datasheet

STPSC10H12G2Y-TR silicon carbide power Schottky diode - STMicroelectronics

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