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RF2L15200CB4

STMicroelectronics
Part Number RF2L15200CB4
Manufacturer STMicroelectronics
Description RF power LDMOS transistor
Published Mar 19, 2023
Detailed Description RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Con...
Datasheet PDF File RF2L15200CB4 PDF File

RF2L15200CB4
RF2L15200CB4

Overview
RF2L15200CB4 Datasheet 200 W, 28 V, HF to 1.
5 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code Frequency VDD POUT Gain Efficiency RF2L15200CB4 860 MHz 28 V 200 W 17.
5 dB 72% • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC Applications • Broadband commercial communications • TV broadcast • Avioncs • Industrial Description The RF2L15200CB4 is a 200 ...


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